no. 1
A new exponentially fitted triangular finite element method for the continuity equations in the drift-diffusion model of semiconductor devices
ESAIM: Modélisation mathématique et analyse numérique, Tome 33 (1999) no. 1, pp. 99-112. 
@article{M2AN_1999__33_1_99_0,
     author = {Wang, Song},
     title = {A new exponentially fitted triangular finite element method for the continuity equations in the drift-diffusion model of semiconductor devices},
     journal = {ESAIM: Mod\'elisation math\'ematique et analyse num\'erique},
     pages = {99--112},
     publisher = {EDP-Sciences},
     volume = {33},
     number = {1},
     year = {1999},
     mrnumber = {1685746},
     zbl = {0961.82030},
     language = {en},
     url = {http://www.numdam.org/item/M2AN_1999__33_1_99_0/}
}
TY  - JOUR
AU  - Wang, Song
TI  - A new exponentially fitted triangular finite element method for the continuity equations in the drift-diffusion model of semiconductor devices
JO  - ESAIM: Modélisation mathématique et analyse numérique
PY  - 1999
SP  - 99
EP  - 112
VL  - 33
IS  - 1
PB  - EDP-Sciences
UR  - http://www.numdam.org/item/M2AN_1999__33_1_99_0/
LA  - en
ID  - M2AN_1999__33_1_99_0
ER  - 
%0 Journal Article
%A Wang, Song
%T A new exponentially fitted triangular finite element method for the continuity equations in the drift-diffusion model of semiconductor devices
%J ESAIM: Modélisation mathématique et analyse numérique
%D 1999
%P 99-112
%V 33
%N 1
%I EDP-Sciences
%U http://www.numdam.org/item/M2AN_1999__33_1_99_0/
%G en
%F M2AN_1999__33_1_99_0
Wang, Song. A new exponentially fitted triangular finite element method for the continuity equations in the drift-diffusion model of semiconductor devices. ESAIM: Modélisation mathématique et analyse numérique, Tome 33 (1999) no. 1, pp. 99-112. http://www.numdam.org/item/M2AN_1999__33_1_99_0/

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